| PART |
Description |
Maker |
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 |
(SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
|
Silicon Storage Technology
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 23C6410 MX23C6410 MX23C6410MC-10 MX23C6410MC-12 MX |
64M-BIT Mask ROM (8/16 Bit Output) For SOP and TSOP Packages
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
| K9F1208U0A K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 UPD46 |
64M-bit(4M-word x 16-bit)MOBILE SPECIFIED RAM
|
NEC
|
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
